SPS01N60C3(2005) Просмотр технического описания (PDF) - Infineon Technologies
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| SPS01N60C3 Datasheet PDF : 0 Pages | |||
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPS01N60C3
VDS @ Tjmax 650
V
RDS(on)
6
Ω
ID
0.8 A
PG-TO251-3-11
Type
SPS01N60C3
Package
Ordering Code
PG-TO251-3-11 -
Marking
01N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 0.6 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 0.8 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage static
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature
Reverse diode dv/dt 3)
Tj , Tstg
dv/dt
Value
0.8
0.5
1.6
20
0.01
0.8
±20
±30
11
-55... +150
15
Unit
A
mJ
A
V
W
°C
V/ns
Rev. 2.0
Page 1
2005-10-24
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