SI1499DH-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI1499DH-T1-GE3 Datasheet PDF : 11 Pages
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Si1499DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.5
0.4
ID = 2 A
TJ = 150 °C
1
TJ = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.3
ID = 250 µA
0.2
0.1
0.0
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0.3
0.2
TJ = 125 °C
0.1
TJ = 25 °C
0.0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
12
10
8
6
TA = 25 °C
4
2
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
Limited by RDS(on)*
10
1
0.1
TA = 25 °C
Single Pulse
10 µs, 100 µs
1 ms
10 ms
100 ms
1 s, 10 s
100 s, DC
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73338
S10-0792-Rev. F, 05-Apr-10
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