SI1499DH-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI1499DH-T1-GE3 Datasheet PDF : 11 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
VGS = 5 V thru 2 V
8
8
6
6
1.5 V
4
4
Si1499DH
Vishay Siliconix
TC = - 55 °C
25 °C
125 °C
2
0
0.0
0.25
1V
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
0.20
0.15
0.10
VGS = 1.5 V
VGS = 1.8 V
VGS = 2.5 V
0.05
VGS = 4.5 V
0.00
0
2
4
6
8
10
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
ID = 2 A
4
3
VDS = 4 V
2
VDS = 5.6 V
800
Ciss
600
400
200
Crss
Coss
0
012345678
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
ID = 2 A
1.4
1.2
1.0
VGS = 4.5 V
VGS = 2.5 V
1
0.8
0
0
2
4
6
8
10
12
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73338
S10-0792-Rev. F, 05-Apr-10
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3
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