NTMFS4835NT1G Просмотр технического описания (PDF) - ON Semiconductor
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NTMFS4835NT1G Datasheet PDF : 8 Pages
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NTMFS4835N
TYPICAL PERFORMANCE CURVES
5000
4500
Ciss
4000
3500
3000
TJ = 25°C
Ciss
12
10
VDS
8
20
QT
18
VGS
16
14
12
2500
6
10
2000
Crss
1500
4 Qgs
Qgd
8
6
1000
500
Coss
0
15 10
5
05
VGS
VDS
10 15 20 25 30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
2
4
ID = 30 A
TJ = 25°C 2
0
0
0 5 10 15 20 25 30 35 40 45 50 55
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
1000
VDS = 15 V
ID = 15 A
VGS = 11.5 V
100
10
td(off)
tf
tr
td(on)
30
VGS = 0 V
25
TJ = 25°C
20
15
10
1
1
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
5
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 ms
100 ms
10
VGS = 20 V
SINGLE PULSE
1 TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
0.1
PACKAGE LIMIT
0.1
1
10
1 ms
10 ms
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
400
360
ID = 28 A
320
280
240
200
160
120
80
40
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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