NTMFS4835NT1G Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
NTMFS4835NT1G Datasheet PDF : 8 Pages
| |||
NTMFS4835N
TYPICAL PERFORMANCE CURVES
170
150
130
110
90
70
50
30
10
0
0
VGS = 5.0 to 10 V
TJ = 25°C
4.0 V
3.5 V
3.2 V
3.0 V
2.8 V
2.6 V
1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
170
150 VDS ≥ 10 V
130
110
90
70
50
TJ = 25°C
30
TJ = 125°C
TJ = −55°C
10
0
0
1
2
3
4
5
6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.030
0.025
0.020
ID = 30 A
TJ = 25°C
0.015
0.010
0.005
0
2
4
6
8
10
12
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.008
0.007
0.006
TJ = 25°C
0.005
0.004
VGS = 4.5 V
0.003
0.002
VGS = 11.5 V
0.001
0
10 15 20 25 30 35 40 45 50 55 60
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
ID = 30 A
VGS = 10 V
1.5
100,000
VGS = 0 V
10,000
TJ = 150°C
1.0
1,000
TJ = 125°C
0.5
100
0
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
4
8
12
16
20
24
28 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
4
Share Link: 