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TC4468MJD Просмотр технического описания (PDF) - TelCom Semiconductor Inc => Microchip

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Компоненты Описание
производитель
TC4468MJD
TelCom-Semiconductor
TelCom Semiconductor Inc => Microchip TelCom-Semiconductor
TC4468MJD Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
LOGIC-INPUT CMOS
QUAD DRIVERS
1
TC4467
TC4468
TC4469
Transition power dissipation arises in the
Maximum operating temperature:
complementary configuration (TC446X) because the
output stage N-channel and P-channel MOS transistors
TJ θJA (PD) = 141°C,
2
are ON simultaneously for a very short period when the
output changes. The transition power dissipation is
approximately:
where: TJ = Maximum allowable junction temperature
(+150°C)
PT = f VS (10 ϫ 10–9).
θJA = Junction-to-ambient thermal resistance
(83.3°C/W) 14-pin plastic package.
Package power dissipation is the sum of load, quies-
cent and transition power dissipations. An example shows
NOTE: Ambient operating temperature should not exceed +85°C for
"EJD" device or +125°C for "MJD" device.
3
the relative magnitude for each term:
C = 1000 pF capacitive load
VS = 15V
D = 50%
f = 200 kHz
PD = Package Power Dissipation = PL + PQ + PT
= 45 mW + 35 mW + 30 mW = 110 mW.
4
VDD
1 µF FILM
0.1 µF CERAMIC
1A 1
1B 2
2A 3
2B 4
3A 5
3B 6
14
13
VOUT
470 pF
12
11
+5V
INPUT
(A, B)
0V
10%
VDD
OUTPUT
90%
tD1
tR
90%
90%
tD2
tF
5
4A 8
4B 9
10
7
0V
10%
10%
6
Input: 100 kHz, square wave,
tRISE = tFALL 10nsec
Figure 1. Switching Time Test Circuit
7
TELCOM SEMICONDUCTOR, INC.
8
4-265

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