74HC1G14-Q100 Просмотр технического описания (PDF) - NXP Semiconductors.
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74HC1G14-Q100 Datasheet PDF : 16 Pages
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74HC1G14-Q100; 74HCT1G14-Q100
Inverting Schmitt trigger
Rev. 2 — 27 December 2012
Product data sheet
1. General description
74HC1G14-Q100 and 74HCT1G14-Q100 are high-speed Si-gate CMOS devices. They
provide an inverting buffer function with Schmitt trigger action. These devices are capable
of transforming slowly changing input signals into sharply defined, jitter-free output
signals.
The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.
The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
The standard output currents are half of those of the 74HC14-Q100 and 74HCT14-Q100.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from 40 C to +85 C and from 40 C to +125 C
Input levels:
For 74HC1G14-Q100: CMOS level
For 74HCT1G14-Q100: TTL level
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )
SOT353-1 and SOT753 package options
3. Applications
Wave and pulse shapers
Astable multivibrators
Monostable multivibrators
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