L6615N Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
L6615N Datasheet PDF : 20 Pages
| |||
L6615
ELECTRICAL CHARACTERISTCS (continued)
(Tj = -40 to 85°C, Vcc=12V, VADJ = 12V, CCOMP = 5nF to GND, RCGA = 16kΩ, unless otherwise specified;
VSENSE = IL * RSENSE, RG1 = RG2 = 200Ω)
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
IOH Source current
VCOMP=1.5V, V SH ≥ 300mV,
VSENSE=-10mV
-150 -350 -400 µA
IOL Sink current
VCOMP= 1.5V, VSENSE=-10mV
200Ω resistor SH to GND
100 200 300
µA
VCOMP(L) Low voltage
0.05 0.15 0.25
VZ Clamp Zener voltage
IZ = 1mA
1.5
V
ADJ AMPLIFIER
IADJ Max. ADJ output current
VSH= 1V, VSENSE= 0V
6.5
10
13
mA
VT Threshold voltage
IADJ=10µA
0.7
V
RA Emitter resistor
Guaranteed by design
60
100 140
Ω
VADJ(MIN) Low saturation voltage
IADJ=5mA
1
V
IADJ=1mA
0.4
V
(*)
Mirror
accuracy
is
defined
as
=:
----------------V----S----H-----------------
VSENSE
⋅
R-----C----G----A-
RG
–
1
⋅ 100
and it represents the accuracy of the transfer between the voltage sensed and the voltage imposed on the
share bus.
BLOCK DIAGRAM
CS+
3
CS-
2
ICGA
CGA 7
CURRENT SENSE
AMPLIFIER (CSA)
UVLO
+
R
_
R
+
SHARE SENSE
_
AMPLIFIER (SSA)
R
ADJ 4
40 mV
+
_
RA
ADJ OUTPUT
AMPLIFIER (AOA)
BIAS
R
24V
R
8 VCC
R
R
R
+
_
Gm ERROR
AMPLIFIER (E/A)
_
+
SHARE DRIVE
AMPLIFIER (SDA)
6 SH
5 COMP
1.5V
0.7V
1
GND
5/20
Share Link: 