MC33349N Просмотр технического описания (PDF) - Motorola => Freescale

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Компоненты Описание

производитель

MC33349N

Lithium battery protection circuit for one cell battery packs

Motorola => Freescale 

MC33349

ELECTRICAL CHARACTERISTICS (Ct = 0.01 µF, TA = 25°C, for min/max values TA is the operating junction temperature range

that applies, unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ VOLTAGE SENSING

Cell Charging Cutoff (Pin 5 to Pin 6)

Overvoltage Threshold, VCell Increasing

Vth(OV)

V

–1, –3 Suffix

–

4.35

–

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ –2, –4 Suffix

Overvoltage Hysteresis VCell Decreasing

Cell Discharging Cutoff (Pin 5 to Pin 6)

–

4.25

–

VH

–

200

–

mV

Undervoltage Threshold, VCell Decreasing

Vth(UV)

V

–1, –3 Suffix

–2, –4 Suffix

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Input Bias Current During Cell Voltage Sample (Pin 5)

–

2.30

–

–

2.28

–

IIIB

–

20

–

µA

Overvoltage Delay Time (Vcell = 4.5 V)

Unervoltage Delay Time (Vcell = 2.1 V)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Cell Voltage Sampling Period

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Cell Voltage Sampling Repitition Period

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ CURRENT SENSING

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Discharge/Charge Current Limit (Pin 2 to Pin 6)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Discharge Threshold Voltage

t(ovd)

–

75

–

ms

t(uvd)

–

13

–

ms

t(smpl)

–

2.0

–

ms

t(rep)

–

26

–

ms

Vth(dschg)

mV

–1, –2 Suffix

–

150

–

–3, –4 Suffix

–

75

–

Discharge Current Hysteresis

DCH

–

50

–

%

Charge Threshold Voltage

Vth(chg)

mV

–1. –2 Suffix

–

–150

–

–3, –4 Suffix

–

–75

–

Charge Current Hysteresis

CCH

–

25

–

%

Current Limit Delay Time (1.0 nF load @ CO & DO; to VDD/2)

Charge Gate Drive Output (Pin 3)

Discharge Gate Drive Output (Pin 1)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ OUTPUTS

t(ccld)

–

10

–

µs

t(dcld)

–

2.0

–

µs

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Charge Gate Drive Output Low (Pin 3 to Pin 2 @ IO = 50 µA)

Volc

–

0.2

–

V

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Charge Gate Drive Output High (Pin 5 to Pin 3 @ IO = –50 µA)

Vohc

–

0.1

–

V

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Discharge Gate Drive Output Low (Pin 1 to Pin 6 @ IO = 50 µA)

Vold

–

0.2

–

V

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Discharge Gate Drive Output High (Pin 5 to Pin 1 @ IO = –50 µA)

Vohd

–

0.2

–

V

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ TOTAL DEVICE

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Average Cell Current

Operating (Vcell = 3.9 V)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Sleepmode (Vcell = 2.0 V)

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Minimum Operating Cell Voltage

Icell

–

8.5

–

µA

–

4.0

–

nA

Vcell

–

1.5

–

V

MOTOROLA ANALOG IC DEVICE DATA

3

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