NTD20N03L27T4 Просмотр технического описания (PDF) - ON Semiconductor
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NTD20N03L27T4 Datasheet PDF : 6 Pages
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NTD20N03L27
40
VGS = 10 V
35
VGS = 8 V
30
25
20
15
10
5
VGS = 4 V
VGS = 4.5 V
VGS = 5 V
VGS = 6 V
VGS = 3.5 V
VGS = 3 V
TJ = 25°C
VGS = 2.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
40
36 VDS > = 10 V
32
28
24
TJ = 100°C
20
16
TJ = 25°C
TJ = −55°C
12
8
4
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.04
VGS = 5 V
0.035
0.03
0.025
TJ = 100°C
TJ = 25°C
0.02
0.015
TJ = −55°C
0.01
0.005
0
2 5 8 12 15 18 22 25 28 32 35 38
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
0.03
TJ = 25°C
0.025
0.02
0.015
VGS = 5 V
VGS = 10 V
0.01
0 4 8 12 16 20 24 28 32 36 40
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
ID = 10 A
VGS = 5 V
1.4
1.2
1
0.8
1000
VGS = 0 V
100
10
TJ = 125°C
TJ = 100°C
0.6
−50 −25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0 3 6 9 12 15 18 21 24 27 30
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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