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RF2137PCBA Просмотр технического описания (PDF) - RF Micro Devices

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Компоненты Описание
производитель
RF2137PCBA
RFMD
RF Micro Devices RFMD
RF2137PCBA Datasheet PDF : 4 Pages
1 2 3 4
2
Typical Applications
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
RF2137
LINEAR POWER AMPLIFIER
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
2
Product Description
The RF2137 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50input and the output
can be easily matched to obtain optimum power, effi-
ciency, and linearity characteristics at all recommended
supply voltages.
3.90
± 0.10
0.43
± 0.05
-A-
0.05
± 0.05
Exposed
Heat Sink
4.90
± 0.10
1.27
2.70
± 0.10
8° MAX
0° MIN
6.00
± 0.20
Dimensions in mm.
0.22
± 0.03
0.60
± 0.15
1.40
± 0.10
1.70
± 0.10
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VCC 1
RF IN 2
GND 3
PC 4
BIAS
PACKAGE BASE
GND
8 RF OUT
7 RF OUT
6 RF OUT
5 RF OUT
Functional Block Diagram
Rev B2 010720
Package Style: SOIC-8 Slug
Features
• Single 4.2V to 6.0V Supply
• Up to 29 dBm Linear Output Power
• 27dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation
Ordering Information
RF2137
Linear Power Amplifier
RF2137 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
2-115

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