VS-1N5818TR Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-1N5818TR Datasheet PDF : 6 Pages
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www.vishay.com
VS-1N5818, VS-1N5818-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
1A
2A
TJ = 25 °C
3A
1A
2A
TJ = 125 °C
3A
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
TJ = 125 °C
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.55
0.71
0.875
0.5
0.61
0.77
1.0
6.0
12
60
8.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to lead
RthJL (1)
DC operation
See fig. 4
TEST CONDITIONS
Approximate weight
Marking device
Case style DO-204AL (DO-41)
Note
(1) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
VALUES
- 40 to 150
UNITS
°C
80
°C/W
0.33
g
0.012
oz.
1N5818
Revision: 21-Sep-11
2
Document Number: 93256
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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