MDP1901 Просмотр технического описания (PDF) - Unspecified

Номер в каталоге

Компоненты Описание

производитель

MDP1901

Single N-channel Trench MOSFET 100V, 36A, 22mΩ

Unspecified 

MDP1901

Single N-channel Trench MOSFET 100V, 36A, 22mΩ

General Description

The MDP1901 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDP1901 is suitable device for DC/DC Converters

and general purpose applications.

Features

 VDS = 100V

 ID = 36A @VGS = 10V



RDS(ON)

< 22mΩ @VGS = 10V

< 25mΩ @VGS = 6.0V

D

GDS

G

S

Absolute Maximum Ratings (Tc = 25oC)

Drain-Source Voltage

Gate-Source Voltage

Characteristics

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy (2)

Junction and Storage Temperature Range

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

TC=25oC

TC=100oC

TC=25oC

TC=100oC

Symbol

VDSS

VGSS

ID

IDM

PD

EAS

TJ, Tstg

Rating

Unit

100

V

±20

V

36

A

24

A

144

A

34

W

14

200

mJ

-55~150

oC

Symbol

RθJA

RθJC

Rating

40

2.3

Unit

oC/W

August. 2010. Version 1.2

1

MagnaChip Semiconductor Ltd.

Share Link: