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DS275 Просмотр технического описания (PDF) - Dallas Semiconductor -> Maxim Integrated

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Компоненты Описание
производитель
DS275
Dallas
Dallas Semiconductor -> Maxim Integrated Dallas
DS275 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DS275
DC ELECTRICAL CHARACTERISTICS (0°C to 70°C; VCC = VDRV = 5V ±=10%)
PARAMETER
SYMBOL MIN TYP MAX UNITS NOTES
TXOUT Level High
VOTXH
3.5 4.0
5.0
V
6
TXOUT Level Low
VOTXL
-8.5 -9.0
V
7
TXOUT Short Circuit Current
ISC
+60
+85
mA
TXOUT Output Slew Rate
tSR
30
V/µs
Propagation Delay
tPD
5
µs
8
RXIN Input Threshold Low
VTL
0.8 1.2
1.6
V
RXIN Input Threshold High
VTH
1.6 2.0
2.4
V
RXIN Threshold Hysteresis
VHYS
0.5 0.8
V
9
RXOUT Output Current @ 2.4V
IOH
-1.0
mA
RXOUT Output Current @ 0.4V
IOL
3.2
mA
NOTES:
1. VDRV must be greater than or equal to VCC.
2. VCC = VDRV = 5V ±=10%.
3. See test circuit in Figure 4.
4. See test circuit in Figure 5.
5. See test circuit in Figure 6.
6. TXIN = VIL and TX OUT loaded by 3 k=to ground.
7. TXIN = VIH, RXIN = -10 volts and TXOUT loaded by 3 k=to ground.
8. TXIN to TXOUT - see Figure 7.
9. VHYS = VTH - VTL.
6 of 8

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