STK5F4U3E2D-E Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
STK5F4U3E2D-E Datasheet PDF : 14 Pages
| |||
STK5F4U3E2D-E
Electrical Characteristics at Tc= 25C, VD1, VD2, VD3, VD4=15V
Parameters
Symbols
Conditions
Test
Ratings
Circuit Min.
Typ.
Unit
Max.
Power output section
Collector-to-emitter cut-off current
Boot-strap diode reverse current
Collector-to-emitter saturation voltage
Diode forward voltage
Junction to case thermal resistance
ICE
IR(BD)
VCE(sat)
VF
θj-c(T)
θj-c(D)
VCE=600V
VR(BD)=600V
Io=50A, Tj=25C
Io=25A, Tj=100C
Io=50A, Tj=25C
Io=25A, Tj=100C
IGBT
FWD
Fig.1
-
-
-
-
Fig.2
-
-
Fig.3
-
-
-
-
-
-
1.0
mA
-
0.5
mA
1.7
2.6
V
2.3
-
1.8
2.7
V
2.5
-
1.5
-
C/W
1.8
-
C/W
Control (Pre-driver) section
Pre-drive power supply consumption
current
High level input voltage
Low level input voltage
Protection section
ID
Vin H
Vin L
VD1,2,3=15V
VD4=15V
HIN1,HIN2,HIN3,
LIN1,LIN2,LIN3
-
Fig.4
-
0.05
0.4
mA
1.0
4.0
-
2.5
-
-
V
-
-
-
0.8
V
ITRIP threshold voltage
Pre-drive low voltage protection
VITRIP
UVLO
ITRIP(17) to VSS(19)
Fig.5
0.44
0.49
0.54
V
-
10
-
12
V
FAULT terminal input electric current
IOSD
VFAULT=0.1V
-
-
1.5
-
mA
FAULT clearance delay time
FLTCLR
From time fault condition
clear
-
1.0
-
3.0
ms
Thermistor for substrate temperature
monitor
Rt
Resistance between the
TH1 and TH2 terminals
-
90
-
110
kΩ
Switching character
Switching time
tON
tOFF
Io=50A, Inductive load
-
0.7
1.5
μs
-
1.1
2.1
μs
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
-
1100
-
μJ
Io=50A, VCC=300V,
Eoff
VD=15V, L=280μH
Fig.6
-
1200
-
μJ
Etot
-
2300
-
μJ
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
Io=50A,VCC=300V,
Eoff
VD=15V,L=280μH,
Etot
Tc=100C
-
1200
-
μJ
-
1350
-
μJ
-
2550
-
μJ
Diode reverse recovery energy
Erec
Io=50A,VCC=300V,
Diode reverse recovery time
VD=15V,L=280μH,
Trr
Tc=100C
Reference Voltage is “VSS” terminal voltage unless otherwise specified.
-
52.5
-
μJ
-
104
-
ns
No.A2230-2/14
Share Link: 