SPN02N60C3E6433 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

SPN02N60C3E6433

CoolMOS™ Power Transistor

Infineon Technologies 

Parameter

Symbol Conditions

SPN02N60C3

min.

Values

typ.

Unit

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

C iss

-

C oss

V GS=0 V, V DS=25 V,

f =1 MHz

-

C rss

-

Effective output capacitance, energy

related3)

C o(er)

-

V GS=0 V, V DS=0 V

to 480 V

Effective output capacitance, time

related4)

C o(tr)

-

Turn-on delay time

Rise time

Turn-off delay time

Fall time

t d(on)

-

tr

V DD=350 V,

-

V GS=10 V, I D=1.8 A,

t d(off)

R G=25 Ω

-

tf

-

200

- pF

90

-

4

-

8

-

16

-

6

- ns

3

-

68

-

12

30

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Q gs

-

Q gd

V DD=420 V, I D=1.8 A,

-

Qg

V GS=0 to 10 V

-

V plateau

-

1.6

- nC

4

-

10

13

5.5

-V

1) Pulse width limited by maximum temperature T j,max only

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

3) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.

4) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Rev. 2.3

page 3

2005-02-21

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