E-TDA2006V Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
E-TDA2006V Datasheet PDF : 12 Pages
| |||
TDA2006
ELECTRICAL CHARACTERISTICS
(refer to the test circuit ; VS = ± 12V, Tamb = 25oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Vs
Supply Voltage
±6
± 15 V
Id
Quiescent Drain Current
Vs = ± 15V
40 80 mA
Ib
Input Bias Current
Vs = ± 15V
0.2 3 µA
VOS Input Offset Voltage
Vs = ± 15V
±8
mV
IOS Input Offset Current
Vs = ± 15V
± 80
nA
VOS Output Offset Voltage
t(s) Po Output Power
uc d
Distortion
rod Vi
Input Sensitivity
te P B
le Ri
so Gv
b Gv
- O eN
t(s) iN
c SVR
u Id
Frequency Response (– 3dB)
Input Resistance (pin 1)
Voltage Gain (open loop)
Voltage Gain (closed loop)
Input Noise Voltage
Input Noise Current
Supply Voltage Rejection
Drain Current
rod Tj
Thermal Shutdown Junction
P Temperature
Obsolete (*) Referring to Figure 15, single supply.
Vs = ± 15V
d = 10%, f = 1kHz
RL = 4Ω
RL = 8Ω
Po = 0.1 to 8W, RL = 4Ω, f = 1kHz
Po = 0.1 to 4W, RL = 8Ω, f = 1kHz
Po = 10W, RL = 4Ω, f = 1kHz
Po = 6W, RL = 8Ω, f = 1kHz
Po = 8W, RL = 4Ω
f = 1kHz
f = 1kHz
f = 1kHz
B (– 3dB) = 22Hz to 22kHz, RL = 4Ω
B (– 3dB) = 22Hz to 22kHz, RL = 4Ω
RL = 4Ω, Rg = 22kΩ, fripple = 100Hz (*)
Po = 12W, RL = 4Ω
Po = 8W, RL = 8Ω
± 10 ± 100 mV
W
12
6
8
0.2
%
0.1
%
200
mV
220
mV
20Hz to 100kHz
0.5 5
MΩ
75
dB
29.5 30 30.5 dB
3 10 µV
80 200 pA
40 50
dB
850
mA
500
mA
145 °C
3/12
Share Link: 