TC7MBL3257CFK(2017) Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание

производитель

TC7MBL3257CFK
(Rev.:2017)

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

Electrical Characteristics

DC Characteristics (Ta = -40 to 85°C)

TC7MBL3257CFT/FK

Characteristic

Symbol

Test Condition

“H” level

VIH

―

Input voltage

( OE , S)

“L” level

VIL

―

Input leakage current ( OE , S)

Power-off leakage current

Off-state leakage current

(switch off)

On resistance

(Note 1) (Note2)

Quiescent supply current

IIN

IOFF

ISZ

RON

ICC

VIN = 0 to 3.6 V

OE , S, A, B = 0 to 3.6 V

A, B = 0 to VCC, OE = VCC

VIS = 0 V, IIS = 30 mA

VIS = 3.0 V, IIS = 30 mA

VIS = 2.4 V, IIS = 15 mA

VIS = 0 V, IIS = 24 mA

VIS = 2.3 V, IIS = 24 mA

VIS = 2.0 V, IIS = 15 mA

VIS = 0 V, IIS = 4 mA

VIS = 1.65 V, IIS = 4 mA

VIN = VCC or GND, IOUT = 0 A

Min Typ. Max Unit

VCC (V)

1.65 to 3.6

0.7 ×

VCC

―

―

V

1.65 to 3.6 ―

―

0.3 ×

VCC

1.65 to 3.6 ―

―

±1.0

μA

0

―

―

10

µA

1.65 to 3.6 ―

―

±1.0

μA

3.0

―

8.5

13

3.0

―

16

24

3.0

―

18

27

2.3

―

10

15

Ω

2.3

―

20

30

2.3

―

23

33

1.65

―

12

18

1.65

―

26

37

3.6

―

―

10

μA

Note 1: All typical values are at Ta=25°C.

Note 2: Measured by the voltage drop between A and B pins at the indicated current through the switch.

On resistance is determined by the lower of the voltages on the two (A or B) pins.

4

2017-02-21

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