NXP Semiconductors
PHD98N03LT
N-channel TrenchMOS logic level FET
80
IS
(A)
60
VGS = 0 V
003aab664
104
C
(pF)
003aab662
Ciss
40
20
175 °C
Tj = 25 °C
0
0
0.3
0.6
0.9
1.2
VSD (V)
Tj = 25 °C and 175 °C; VGS = 0 V
Fig 13. Source current as a function of source-drain
voltage; typical values
103
Coss
Crss
102
10-1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHD98N03LT_5
Product data sheet
Rev. 05 — 1 December 2006
© NXP B.V. 2006. All rights reserved.
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