PHD98N03LT Просмотр технического описания (PDF) - NXP Semiconductors.

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PHD98N03LT

N-channel TrenchMOS logic level FET

NXP Semiconductors. 

NXP Semiconductors

PHD98N03LT

N-channel TrenchMOS logic level FET

6. Characteristics

Table 5. Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter

Static characteristics

V(BR)DSS drain-source breakdown

voltage

VGS(th) gate-source threshold voltage

IDSS

drain leakage current

IGSS

RDSon

gate leakage current

drain-source on-state

resistance

Dynamic characteristics

QG(tot) total gate charge

QGS

gate-source charge

QGD

gate-drain charge

Ciss

input capacitance

Coss

output capacitance

Crss

reverse transfer capacitance

td(on)

tr

turn-on delay time

rise time

td(off)

turn-off delay time

tf

fall time

Source-drain diode

VSD

source-drain voltage

trr

reverse recovery time

Qr

recovered charge

Conditions

ID = 250 µA; VGS = 0 V

Tj = 25 °C

Tj = −55 °C

ID = 1 mA; VDS = VGS; see Figure 9 and 10

Tj = 25 °C

Tj = 175 °C

Tj = −55 °C

VDS = 25 V; VGS = 0 V

Tj = 25 °C

Tj = 175 °C

VGS = ±15 V; VDS = 0 V

VGS = 5 V; ID = 25 A; see Figure 6 and 8

Tj = 25 °C

Tj = 175 °C

VGS = 10 V; ID = 25 A; see Figure 6 and 8

ID = 50 A; VDS = 15 V; VGS = 5 V;

see Figure 11 and 12

VGS = 0 V; VDS = 20 V; f = 1 MHz;

see Figure 14

VDS = 15 V; ID = 12.5 A; VGS = 5 V;

RG = 5.6 Ω

IS = 25 A; VGS = 0 V; see Figure 13

IS = 10 A; dIS/dt = −100 A/µs; VGS = 0 V

Min Typ Max Unit

25 -

-

V

22 -

-

V

1

1.5 2

V

0.5 -

-

V

-

-

2.3 V

-

0.05 1

µA

-

-

500 µA

-

10 100 nA

-

6.2 7.3 mΩ

-

10.5 12.4 mΩ

-

5.2 5.9 mΩ

-

40 -

nC

-

16 -

nC

-

15 -

nC

-

3000 -

pF

-

710 -

pF

-

510 -

pF

-

18 -

ns

-

80 -

ns

-

104 -

ns

-

104 -

ns

-

0.9 1.2 V

-

37 -

ns

-

20 -

nC

PHD98N03LT_5

Product data sheet

Rev. 05 — 1 December 2006

© NXP B.V. 2006. All rights reserved.

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