UMZ8.2T Просмотр технического описания (PDF) - ROHM Semiconductor
Номер в каталоге
Компоненты Описание
производитель
UMZ8.2T Datasheet PDF : 5 Pages
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Diodes
UMZ8.2T
zElectrical characteristic curves (Ta=25°C)
10
Ta=25℃
1
Ta=-25℃
0.1
0.01
Ta=75℃
Ta=125℃
Ta=150℃
0.001
7
7.5 8 8.5 9 9.5 10
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
1000
100
10
1
0.1
0.01
0.001
0.0001
0
Ta=150℃
Ta=125℃
100
Ta=75℃
Ta=25℃
10
Ta=-25℃
f=1MHz
1
2
3
4
5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1
0
1
2
3
4
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
8.5
Ta=25℃
IZ=5mA
8.4
n=30pcs
8.3
8.2
8.1
AVE:8.206V
8
Vz DISRESION MAP
1
30
0.9
Ta=25℃
29
0.8
VR=5.0V
n=30pcs
28
0.7
27
0.6
26
0.5
25
0.4
24
0.3
23
0.2
AVE:0.074nA
22
0.1
21
0
20
IR DISRESION MAP
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:24.75pF
Ct DISRESION MAP
1000
100
10
1
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
1000
100
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
IM=10mA
IF=100mA
10
1ms time
300us
1
10
0.001
0.1
10
1000
TIME:t(s)
Rth-t CHARACTERISTICS
Rev.A
2/2
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