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PS30120(2011) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
PS30120
(Rev.:2011)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
PS30120 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
STPS30120DJF
Characteristics
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature (δ = 0.5)
PF(AV)(W)
30.0
25.0
20.0
15.0
δ=0.05
δ=0.1
δ=0.2
10.0
5.0
0.0
0
IF(AV)(A)
5
10
15
20
25
δ=0.5
δ=1
T
δ=tp/T
tp
30
35
40
IF(AV)(A)
35
30
Rth(j-a)=Rth(j-c)
25
20
15
10
T
5
δ=tp/T
tp
0
0
25
50
Tamb(°C)
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM (Tj)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
IM(A)
200
180
160
140
120
100
80
60
40
IM
20
0
1.E-03
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values)
Relative variation of thermal
impedance, junction to case,
versus pulse duration
t
δ =0.5
1.E-02
t(s)
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
0.0
1.E-05
1.E-04
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Doc ID 15671 Rev 5
3/7

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