PS30120(2011) Просмотр технического описания (PDF) - STMicroelectronics
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PS30120 Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS30120DJF
Table 2. Absolute Ratings (limiting values, anode terminals short circuited)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
120
V
IF(RMS) Forward rms current
45
A
IF(AV) Average forward current
Tc = 80 °C, δ = 0.5
30
A
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
200
A
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
12500
W
Tstg Storage temperature range
-65 to + 175 °C
Tj Maximum operating junction temperature (1)
150
°C
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
2.5
°C/W
Table 4.
Symbol
Static electrical characteristics (anode terminals short circuited)
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage
current
VF(1) Forward voltage drop
1. Pulse test: tp = 380 µs, δ < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 15 A
IF = 30 A
To evaluate the conduction losses use the following equation:
P = 0.61 x IF(AV) + 0.005 IF2(RMS)
35
µA
5.5
16
mA
0.84
0.61 0.67
V
0.92
0.68 0.75
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Doc ID 15671 Rev 5
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