RFV10N50BE Просмотр технического описания (PDF) - Intersil
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RFV10N50BE Datasheet PDF : 6 Pages
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Specifications RFV10N50BE
Electrical Specifications Case Temperature (TC) = +25oC, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Source Charge
Gate Drain (“Miller”) Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance
Thermal Resistance
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG10
QGS
QGD
CISS
COSS
CRSS
RθJC
RθJA
ID = 0.25mA, VGS = 0V
VGS = VDS, ID = 0.25mA
VDS = 500V,
VGS = 0V
TC = +25oC
TC = +125oC
VGS = +12V, VGS = -0.3V
ID = 10A, VGS = 10V
VDD = 250V, ID = 10A, RL = 25Ω,
VGS1 = VGS2 = +10V, RGS1 = 6.25Ω,
RGS2 = 20Ω
VGS = 0V to 10V
VDD = 400V,
ID = 10A,
RL = 40Ω
VDS = 25V, VGS = 0V, f = 1MHz
Junction to Case
Junction to Ambient
500
-
-
V
2
-
4
V
-
-
1
µA
-
-
250
µA
-
-
±500
nA
-
-
0.480
Ω
-
-
75
ns
-
20
-
ns
-
30
-
ns
-
21
-
ns
-
5
-
ns
-
-
50
ns
-
145
190
nC
-
17
22
nC
-
57
74
nC
-
3800
-
pF
-
290
-
pF
-
75
-
pF
-
-
0.8
oC/W
-
-
40
oC/W
Control FET Specifications
PARAMETER
Static Drain to Source
Drain Source Breakdown Voltage
Gate Threshold Voltage
Total Gate Charge
SYMBOL
TEST CONDITIONS
rDS(ON)
BVDSS
VGS(TH)
QG10
VGS = 10V, ID = 1.0A
ID = 1.0mA, VGS = 0V
VDS = VGS, ID = 0.25mA
ID = 1.0A, VGS = 10V
LIMITS
MIN
TYP MAX UNITS
-
1.6
-
Ω
14
15
-
V
2
-
4
V
-
-
5
nC
Source-Drain Diode Ratings and Specifications
PARAMETER
Continuous Source Current
Pulsed Source Current
Forward Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
IS
ISM
VSD
ISD = 10A, VGS = 0V
tRR
ISD = 10A, VGS = 0V, dISD/dt = 100A/µs
LIMITS
MIN
TYP MAX UNITS
-
-
10
A
-
-
25
A
-
-
1.4
V
-
-
750
ns
2
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