HGTP10N50F1D Просмотр технического описания (PDF) - Intersil

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HGTP10N50F1D

10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Intersil 

HGTP10N40F1D, HGTP10N50F1D

Typical Performance Curves (Continued)

1000

TJ = +150oC, TC = +100oC, VGE = 10V

RG = 25Ω, PT = 75W, L = 50µH

100

VCE = 200V

VCE = 400V

10

fMAX1 = 0.05/tD(OFF)I

fMAX2 = (PD - PC)/WOFF

1

1

10

100

NOTE:

ICE, COLLECTOR-EMITTER CURRENT (A)

PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION

FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR

CURRENT AND VOLTAGE (TYPICAL)

500

GATE-

EMITTER

VOLTAGE

375

VCC = BVCES

10

RL = 100Ω

IG(REF) = 0.33mA

VGE = 10V

VCC = BVCES

250

5

0.75 BVCES 0.75 BVCES

125

0.50 BVCES 0.50 BVCES

0.25 BVCES 0.25 BVCES

COLLECTOR-EMITTER VOLTAGE

0

IG(REF)

20

IG(ACT)

TIME (µs)

0

IG(REF)

80

IG(ACT)

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT

CONSTANT GATE CURRENT

100

TJ = +150oC

10

TJ = +100oC

1.0

TJ = +25oC

0.1

0.4 0.6 0.8 1.0

1.2 1.4

TJ = -50oC

1.6 1.8 2.0

VEC, EMITTER-COLLECTOR VOLTAGE (V)

FIGURE 11. TYPICAL FORWARD VOLTAGE

Test Circuit

dVIREC=/d3t0V≥,1T0J0=A/+µ2s5oC

60

50

40

30

20

10

0 2 4 6 8 10 12 14 16

IEC, EMITTER-COLLECTOR CURRENT (A)

FIGURE 12. TYPICAL REVERSE RECOVERY TIME

RL

L = 50µH

1/RG = 1/RGEN + 1/RGE

RGEN = 50Ω

20V

0V

RGE = 50Ω

VCC

+

400V -

FIGURE 13. INDUCTIVE SWITCHING TEST CIRCUIT

3-28

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