10N50F1D Просмотр технического описания (PDF) - Intersil
Номер в каталоге
Компоненты Описание
производитель
10N50F1D Datasheet PDF : 5 Pages
| |||
Specifications HGTP10N40F1D, HGTP10N50F1D
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current
Collector-Emitter On-Voltage
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = WOFF x
Frequency)
Turn-Off Delay Time
Fall Time
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = WOFF x
Frequency)
Thermal Resistance Junction-to-
Case (IGBT)
Thermal Resistance of Diode
Diode Forward Voltage
Diode Reverse Recovery Time
SYMBOL
TEST CONDITIONS
BVCES IC = 1.25mA, VGE = 0V
VGE(TH)
ICES
IGES
VCE(ON)
VGEP
QG(ON)
tD(ON)
tRI
tD(OFF)
tFI
WOFF
VGE = VCE, IC = 1mA
TJ = +150oC, VCE = 400V
TJ = +150oC, VCE = 500V
VGE = ±20V, VCE = 0V
TJ = +150oC, IC = 5A, VGE = 10V
TJ = +150oC, IC = 5A, VGE = 15V
TJ = +25oC, IC = 5A, VGE = 10V
TJ = +25oC, IC = 5A, VGE = 15V
IC = 5A, VCE = 10V
IC = 5A, VCE = 10V
Resistive Load, IC = 5A,
VCE = 400V, RL = 80Ω,
TJ = +150oC, VGE = 10V,
RG = 25Ω
tD(OFF)I
tFI
WOFF
Inductive Load (See Figure 13),
IC = 5A, VCE(CLP) = 400V, RL =
80Ω, L = 50µH, TJ = +150oC, VGE =
10V, RG = 25Ω
RθJC
RθJC
VEC
tRR
IEC = 10A
IEC = 10A, dIEC/dt = 100A/µs
LIMITS
HGTP10N40F1D HGTP10N50F1D
MIN MAX MIN MAX
400
-
500
-
2.0
4.5
2.0
4.5
-
1.25
-
-
-
-
-
1.25
-
100
-
100
-
2.5
-
2.5
-
2.2
-
2.2
-
2.5
-
2.5
-
2.2
-
2.2
5.3 (Typ)
13.4 (Typ)
45 (Typ)
35 (Typ)
130 (Typ)
1400 (Typ)
0.64 (Typ)
-
375
-
375
-
1200
-
1200
-
1.2
-
1.2
-
1.67
-
1.67
-
2.0
-
2.0
-
1.7
-
1.7
-
60
-
60
UNITS
V
V
mA
mA
nA
V
V
V
V
V
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
oC/W
oC/W
V
ns
Typical Performance Curves
12
PULSE TEST, VCE = 10V
PULSE DURATION = 250µs
10 DUTY CYCLE < 2%
8
TC = -55oC
6
4
TC = -55oC
2
TC = +25oC
TC = +150oC
0
0
2
4
6
8
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS
10
VGE = 10V
VGE = 6.0V
8
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
TC = +25oC
6
VGE = 5.5V
VGE = 5.0V
4
VGE = 4.5V
2
VGE = 4.0V
0
0
2
4
6
8
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
3-26
Share Link: 