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TC7660EJA

Charge Pump DC-to-DC Voltage Converter

Microchip Technology 

TC7660

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage .............................................................+10.5V

LV and OSC Inputs Voltage: (Note 1)

.............................................. -0.3V to VSS for V+ < 5.5V

..................................... (V+ – 5.5V) to (V+) for V+ > 5.5V

Current into LV ......................................... 20 µA for V+ > 3.5V

Output Short Duration (VSUPPLY  5.5V)............... Continuous

Package Power Dissipation: (TA  70°C)

8-Pin CERDIP ....................................................800 mW

8-Pin PDIP .........................................................730 mW

8-Pin SOIC .........................................................470 mW

Operating Temperature Range:

C Suffix.......................................................0°C to +70°C

I Suffix .....................................................-25°C to +85°C

E Suffix ....................................................-40°C to +85°C

M Suffix .................................................-55°C to +125°C

Storage Temperature Range .........................-65°C to +160°C

ESD protection on all pins (HBM) ................... .............. 3 kV

Maximum Junction Temperature ........... ....................... 150°C

* Notice: Stresses above those listed under “Maximum Rat-

ings” may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational sections of this specification is not intended. Expo-

sure to maximum rating conditions for extended periods may

affect device reliability.

C1 +

10 µF

1

8

2

7

TC7660

3

6

4

5

IS

IL

COSC

V+

(+5V)

RL

VOUT

C2

+ 10 µF

FIGURE 1-1:

TC7660 Test Circuit.

ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Unless otherwise noted, specifications measured over operating temperature range with V+ = 5V,

COSC = 0, refer to test circuit in Figure 1-1.

Parameters

Sym

Min

Typ

Max Units

Conditions

Supply Current

Supply Voltage Range, High

Supply Voltage Range, Low

I+

—

80

180

µA RL = 

V+H

3.0

—

10

V Min TAMax, RL = 10 k, LV Open

V+L

1.5

—

3.5

V Min TAMax, RL = 10 k, LV to GND

Output Source Resistance

ROUT

—

70

100

 IOUT=20 mA, TA = +25°C

—

—

120

IOUT=20 mA, TA  +70°C (C Device)

—

—

130

IOUT=20 mA, TA  +85°C (E and I Device)

—

104

150

—

150

300

—

160

600

IOUT=20 mA, TA  +125°C (M Device)

V+ = 2V, IOUT = 3 mA, LV to GND

0°C  TA  +70°C

V+ = 2V, IOUT = 3 mA, LV to GND

-55°C  TA  +125°C (M Device)

Oscillator Frequency

fOSC

—

10

—

kHz Pin 7 open

Power Efficiency

PEFF

95

98

—

% RL = 5 k

Voltage Conversion Efficiency VOUTEFF 97

99.9

—

% RL = 

Oscillator Impedance

ZOSC

—

1.0

—

M V+ = 2V

—

100

—

k V+ = 5V

Note 1: Destructive latch-up may occur if voltages greater than V+ or less than GND are supplied to any input pin.

DS21465C-page 2

 2002-2011 Microchip Technology Inc.

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