GW30NC60WD Просмотр технического описания (PDF) - STMicroelectronics

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производитель

GW30NC60WD

30 A, 600 V ultra fast IGBT

STMicroelectronics 

Electrical characteristics

STGW30NC60WD

Figure 8. Normalized gate threshold voltage Figure 9. Collector-emitter on voltage vs

vs temperature

collector current

Figure 10. Normalized breakdown voltage vs

temperature

VCE(sat)

(V)

3.2

3

2.8

2.6

2.4

2.2

2

1.8

1.6

1.4

1.2

1

0.8

0

TJ=-50°C

HV28950

TJ=25°C

TJ=150°C

5 10 15 20 25 30 35 40 45 50 55 60 IC(A)

Figure 11. Switching losses vs temperature

Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector

current

8/14

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