HUF76131SK8 Просмотр технического описания (PDF) - Intersil
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HUF76131SK8 Datasheet PDF : 10 Pages
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HUF76131SK8
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
HUF76131SK8
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
30
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±16
V
Drain Current
Continuous (Figure 2) (Notes 2, 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
10
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 5
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
2.5
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.02
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
BVDSS ID = 250µA, VGS = 0V (Figure 11)
30
VGS(TH) VGS = VDS, ID = 250µA (Figure 10)
1
IDSS
VDS = 25V, VGS = 0V
-
VDS = 25V, VGS = 0V, TA = 150oC
-
IGSS
VGS = ±16V
-
rDS(ON) ID = 10A, VGS = 4.5V (Figures 9,14)
-
ID = 10A, VGS = 5V
-
ID = 10A, VGS = 10V
-
tON
VDD = 15V, ID ≅ 10A, RL = 1.5Ω, VGS = 5V,
-
td(ON)
RGS = 6.8Ω
(Figure 15)
-
tr
-
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
td(OFF)
-
tf
-
tOFF
-
Qg(TOT) VGS = 0V to 10V VDD = 15V, ID ≅ 10A,
-
Qg(5)
VGS = 0V to 5V
RL = 1.5Ω, Ig(REF) = 1.0mA
(Figure 13)
-
Qg(TH) VGS = 0V to 1V
-
Qgs
-
Qgd
-
CISS
VDS = 25V, VGS = 0V, f = 1MHz
-
COSS (Figure 12)
-
Reverse Transfer Capacitance
CRSS
-
Thermal Resistance Junction to Ambient
RθJA
Pad Area = 0.76 in2 (Note 2)
-
Pad Area = 0.054 in2 (See TB377)
-
Pad Area = 0.0115 in2 (See TB377)
-
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
VSD
ISD = 10A
-
ISD = 2.3A
-
Reverse Recovery Time
trr
ISD = 2.3A, dISD/dt = 100A/µs
-
Reverse Recovered Charge
QRR
ISD = 2.3A, dISD/dt = 100A/µs
-
NOTES:
2. 50oC/W measured using FR-4 board with 0.76 in2 footprint at 10 seconds.
3. 177.3oC/W measured using FR-4 board with 0.0115 in2 footprint at 1000 seconds.
TYP
-
-
-
-
-
0.017
0.015
0.011
-
15
61
33
36
-
39
22
1.53
4.00
9.50
1605
685
115
-
-
-
MAX
-
-
1
250
±100
0.018
0.017
0.013
115
-
-
-
-
105
47
26
1.85
-
-
-
-
-
50
143.4
177.3
UNITS
V
V
µA
µA
nA
Ω
Ω
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
nC
pF
pF
pF
oC/W
oC/W
oC/W
TYP MAX UNITS
-
1.25
V
-
1.1
V
-
57
ns
-
81
nC
2
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