86116 Просмотр технического описания (PDF) - Intersil

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Компоненты Описание

производитель

86116

10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET

Intersil 

ITF86116SQT

Typical Performance Curves (Continued)

500

RθJA = 62.5oC/W

SINGLE PULSE

TJ = MAX RATED

100

TA = 25oC

100µs

10

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

1ms

10ms

1

1

10

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

40

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = 15V

30

TJ = 150oC

20

TJ = 25oC

10

0

2.0

TJ = -55oC

2.5

3.0

3.5

4.0

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. TRANSFER CHARACTERISTICS

40

VGS = 10V

30 VGS = 5V

VGS = 4V

VGS = 4.5V

20

VGS = 3.5V

PULSE DURATION = 80µs

10

DUTY CYCLE = 0.5% MAX

TA = 25oC

VGS = 3V

0

0

0.2

0.4

0.6

0.8

1.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 7. SATURATION CHARACTERISTICS

25

20

ID = 1A

15

10

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

ID = 10A

5

2

4

6

8

10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

1.4

VGS = 10V, ID = 10A

1.2

1.0

0.8

0.6

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.2

VGS = VDS, ID = 250µA

1.0

0.8

0.6

0.4

-80

-40

0

40

80

120

160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

4

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