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SAM7X512 Просмотр технического описания (PDF) - Atmel Corporation

Номер в каталоге
Компоненты Описание
производитель
SAM7X512
Atmel
Atmel Corporation Atmel
SAM7X512 Datasheet PDF : 44 Pages
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SAM7X512/256/128 Summary
8. Memories
8.1 SAM7X512
8.2 SAM7X256
8.3 SAM7X128
• 512 Kbytes of dual-plane Flash Memory
– 2 contiguous banks of 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 32 lock bits, protecting 32 sectors of 64 pages
– Protection Mode to secure contents of the Flash
• 128 Kbytes of Fast SRAM
– Single-cycle access at full speed
• 256 Kbytes of Flash Memory
– 1024 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 16 lock bits, each protecting 16 sectors of 64 pages
– Protection Mode to secure contents of the Flash
• 64 Kbytes of Fast SRAM
– Single-cycle access at full speed
• 128 Kbytes of Flash Memory
– 512 pages of 256 bytes
– Fast access time, 30 MHz single-cycle access in Worst Case conditions
– Page programming time: 6 ms, including page auto-erase
– Page programming without auto-erase: 3 ms
– Full chip erase time: 15 ms
– 10,000 write cycles, 10-year data retention capability
– 8 lock bits, each protecting 8 sectors of 64 pages
– Protection Mode to secure contents of the Flash
• 32 Kbytes of Fast SRAM
– Single-cycle access at full speed
17
6120GS–ATARM–07-Apr-11

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