VEMT2523X01 Просмотр технического описания (PDF) - Vishay Semiconductors
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VEMT2523X01 Datasheet PDF : 8 Pages
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www.vishay.com
VEMT2503X01, VEMT2523X01
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector emitter voltage
Emitter collector voltage
Collector current
Power power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tamb 75 °C
Acc. reflow profile fig. 8
Acc. J-STD-051
VCEO
VECO
IC
PV
Tj
Tamb
Tstg
Tsd
RthJA
120
100
80
60
RthJA = 250 K/W
40
20
0
0 10 20 30 40 50 60 70 80 90 100
21619
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
VALUE
20
7
50
100
100
- 40 to + 100
- 40 to + 100
260
250
UNIT
V
V
mA
mW
°C
°C
°C
°C
K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Collector emitter breakdown voltage
IC = 0.1 mA
VCEO
20
Collector dark current
Collector emitter capacitance
Collector light current
Angle of half sensitivity
VCE = 5 V, E = 0
ICEO
VCE = 0 V, f = 1 MHz, E = 0
CCEO
Ee = 1 mW/cm2, = 950 nm,
VCE = 5 V
Ica
1.3
Wavelength of peak sensitivity
p
Range of spectral bandwidth
0.1
Collector emitter saturation voltage
Temperature coefficient of Ica
IC = 0.05 mA
Ee = 1 mW/cm2, = 950 nm,
VCE = 5 V
VCEsat
TkIca
TYP.
1
25
2.7
± 35
850
470 to 1090
1.1
MAX.
100
4.1
0.4
UNIT
V
nA
pF
mA
deg
nm
nm
V
%/K
Rev. 1.0, 08-Apr-13
2
Document Number: 84168
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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