APTDF400KK20G Просмотр технического описания (PDF) - Microsemi Corporation
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APTDF400KK20G Datasheet PDF : 5 Pages
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APTDF400KK20G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
VF Diode Forward Voltage
IRM Maximum Reverse Leakage Current
CT Junction Capacitance
Test Conditions
Min Typ Max Unit
IF = 400A
IF = 800A
1.0 1.1
1.4
V
IF = 400A
Tj = 125°C
0.9
VR = 200V
Tj = 25°C
Tj = 125°C
750
1000
µA
VR = 200V
1600
pF
Dynamic Characteristics
Symbol Characteristic
trr Reverse Recovery Time
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
Test Conditions
Min Typ Max Unit
IF=1A,VR=30V
di/dt = 400A/µs
Tj = 25°C
39
ns
Tj = 25°C
60
ns
Tj = 125°C
110
IF = 400A
VR = 133V
di/dt = 800A/µs
Tj = 25°C
Tj = 125°C
800
3360
nC
Tj = 25°C
24
A
Tj = 125°C
60
IF = 400A
80
ns
VR = 133V Tj = 125°C
7.64
µC
di/dt = 4000A/µs
176
A
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
For terminals
Wt Package Weight
Min Typ Max Unit
0.14 °C/W
4000
V
-40
150
-40
125 °C
-40
100
M6
3
M5
2
5
3.5
N.m
300 g
www.microsemi.com
2-5
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