DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

APTDF400KK60G(2006) Просмотр технического описания (PDF) - Microsemi Corporation

Номер в каталоге
Компоненты Описание
производитель
APTDF400KK60G
(Rev.:2006)
Microsemi
Microsemi Corporation Microsemi
APTDF400KK60G Datasheet PDF : 4 Pages
1 2 3 4
APTDF400KK60G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.9
0.12
0.7
0.1
0.08
0.5
0.06
0.3
0.04
0.1
0.02
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
1200
1000
800
TJ =175°C
600
400
TJ=125°C
200
TJ=25°C
TJ=-55°C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF, Anode to Cathode Voltage (V)
Trr vs. Current Rate of Charge
300
TJ =125°C
250
800 A
VR=400V
400 A
200
150
200 A
100
50
0
800 1600 2400 3200 4000 4800
-diF/dt (A/µs)
QRR vs. Current Rate Charge
16
TJ=125°C
800 A
VR=400V
12
400 A
8
200 A
4
0
0 800 1600 2400 3200 4000 4800
-diF/dt (A/µs)
IRRM vs. Current Rate of Charge
240
200
TJ=125°C
V R=400V
160
800 A
400 A
200 A
120
80
40
0
0 800 1600 2400 3200 4000 4800
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
5600
4800
4000
3200
2400
1600
800
0
1
10
100
1000
VR, Reverse Voltage (V)
Max. Average Forward Current vs. Case Temp.
600
Duty Cycle = 0.5
500
TJ=175°C
400
300
200
100
0
25 50 75 100 125 150 175
Case Temperature (°C)
www.microsemi.com
3-4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]