APTDF400KK60G(2006) Просмотр технического описания (PDF) - Microsemi Corporation

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Компоненты Описание

производитель

APTDF400KK60G
(Rev.:2006)

Dual Common Cathode diodes Power Module

Microsemi Corporation 

APTDF400KK60G

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

VF Diode Forward Voltage

IRM Maximum Reverse Leakage Current

CT Junction Capacitance

Test Conditions

Min Typ Max Unit

IF = 400A

IF = 800A

IF = 400A

VR = 600V

Tj = 125°C

Tj = 25°C

Tj = 125°C

1.6 2.0

2.0

V

1.3

750

1000

µA

VR = 600V

760

pF

Dynamic Characteristics

Symbol Characteristic

trr Reverse Recovery Time

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IRRM Reverse Recovery Current

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

IRRM Reverse Recovery Current

Test Conditions

Min Typ Max Unit

IF=1A,VR=30V

di/dt = 400A/µs

Tj = 25°C

34

ns

Tj = 25°C

160

ns

Tj = 125°C

220

IF = 400A

VR = 400V

Tj = 25°C

1.16

µC

di/dt = 800A/µs Tj = 125°C

6.12

Tj = 25°C

20

A

Tj = 125°C

52

IF = 400A

100

ns

VR = 400V Tj = 125°C

11.6

µC

di/dt = 4000A/µs

176

A

Thermal and package characteristics

Symbol Characteristic

RthJC

VISOL

TJ

TST G

TC

Torque

Junction to Case Thermal Resistance

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

Operating junction temperature range

Storage Temperature Range

Operating Case Temperature

Mounting torque

To heatsink

M6

For terminals

M5

Wt Package Weight

Min Typ Max Unit

0.14 °C/W

2500

V

-40

175

-40

125 °C

-40

100

3

2

5

3.5

N.m

280 g

www.microsemi.com

2-4

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