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Номер в каталоге
Компоненты Описание
NE34018-T1 Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
NE34018-T1
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC => Renesas Technology
NE34018-T1 Datasheet PDF : 16 Pages
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TYPICAL CHARACTERISTICS (T
A
= 25
q
C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
200
150
100
50
0
50
100
150
200
T
A
- Ambient Temperature - ˚C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
V
DS
= 2 V
80
60
40
20
0
–2.0
–1.0
0
V
GS
- Gate to Source Voltage - V
NE34018
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
V
GS
= 0 V
80
–0.2 V
60
40
–0.4 V
20
–0.6 V
0
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
NOISE FIGURE, ASSOCIATED GAIN vs.
DRAIN CURRENT
1.0
18
V
DS
= 2 V
f = 2 GHz
G
a
0.9
17
0.8
16
0.7
15
0.6
14
NF
0.5
0.4
0
10
20
30
I
D
- Drain Current - mA
3
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