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Номер в каталоге
Компоненты Описание
NE6510179A Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
NE6510179A
1 W L-BAND POWER GaAs HJ-FET
NEC => Renesas Technology
NE6510179A Datasheet PDF : 8 Pages
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APPLICATION CIRCUIT EXAMPLE
f = 1.9 GHz (Unit: mm)
V
GS
V
DS
Tantalum Condenser
47
µ
F
R
g
1 000 p
NE6510179A
Tantalum Condenser
100
µ
F
λ
/4 OPEN STUB
2
C1
3
5
4
3
42
INPUT
12
λ
/4 LINE
5
4
λ
/4 OPEN STUB
16
16
22
50
Ω
LINE
3
6
3
2
39.5
3
5
C2
OUTPUT
f = 1.9 GHz
V
DS
= 3.5 V
I
Dset
= 200 mA (RF OFF)
C1 = 30 pF
C2 = 30 pF
R
g
= 100
Ω
APPLICATION CIRCUIT EXAMPLE
f = 900 MHz (Unit: mm)
V
GS
V
DS
Tantalum Condenser
47
µ
F
R
g
1 000 p
GND
Substrate: Teflon glass (
ε
r = 2.6)
t = 0.8 mm
Tantalum Condenser
100
µ
F
2
C1
INPUT
λ
/4 OPEN STUB
λ
/4 LINE
λ
/4 OPEN STUB
3
12
6
C4
2
2
1.5
11 2
6
51
4
4
R1
C3
C6 2
1.5
18
3
3 20
C5
5
6
2.5
2
C7
50
Ω
LINE
31
C2 OUTPUT
2.5
3
f = 900 MHz
V
DS
= 3.5 V
I
Dset
= 200 mA (RF OFF)
C1 = 30 pF
C2 = 30 pF
C3 = 30 pF
C4 = 3 pF
C5 = 8 pF
C6 = 8 pF
C7 = 4 pF
R1 = 30
Ω
R
g
= 100
Ω
Data Sheet P13496EJ4V0DS00
GND
Substrate: Teflon glass (
ε
r = 2.6)
t = 0.8 mm
5
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