NE6510179A Просмотр технического описания (PDF) - NEC => Renesas Technology
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NE6510179A Datasheet PDF : 8 Pages
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NE6510179A
TYPICAL RF PERFORMANCE FOR REFERENCE
(TA = +25°C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Output Power
Drain Current
Power Added Efficiency
Linear GainNote
Symbol
Pout
ID
ηadd
GL
Test Conditions
f = 900 MHz, VDS = 3.5 V,
Pin = +20 dBm, Rg = 100 Ω,
IDset = 200 mA (RF OFF)
MIN.
−
−
−
−
TYP.
31.5
0.53
70
15.0
MAX.
−
−
−
−
Unit
dBm
A
%
dB
Note Pin = 0 dBm
TYPICAL RF PERFORMANCE FOR REFERENCE
(TA = +25°C, unless otherwise specified, using NEC standard test fixture.)
Parameter
Output Power
Drain Current
Power Added Efficiency
Linear GainNote
Symbol
Pout
ID
ηadd
GL
Test Conditions
f = 1.9 GHz, VDS = 5.0 V,
Pin = +25 dBm, Rg = 100 Ω,
IDset = 200 mA (RF OFF)
MIN.
−
−
−
−
TYP.
35.0
1.2
56
10.0
MAX.
−
−
−
−
Unit
dBm
A
%
dB
Note Pin = 0 dBm
TYPICAL CHARACTERISTICS (TA = +25°C)
OUTPUT POWER, DRAIN CURRENT AND GATE CURRENT vs. INPUT POWER
35
VDS = 3.5 V
IDset = 200 mA (RF OFF)
Rg = 100 Ω
f = 1.9 GHz
30
8
1 500
6
Pout
25
1 000
4
20
ID
2
500
15
IG
0
10
0
–2
0
5
10
15
20
25
30
Input Power Pin (dBm)
Remark The graph indicates nominal characteristics.
Data Sheet P13496EJ4V0DS00
3
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