NE6510179A Просмотр технического описания (PDF) - NEC => Renesas Technology
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NE6510179A Datasheet PDF : 8 Pages
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DATA SHEET
N-CHANNEL GaAs HJ-FET
NE6510179A
1 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear
gain, high efficiency and excellent distortion.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• GaAs HJ-FET structure
• High output power
: Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm
Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
• High linear gain
: GL = 15 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm
GL = 10 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm
GL = 10 dB TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm
• High power added efficiency : 70% TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm
58% TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
56% TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm
ORDERING INFORMATION
Part Number
NE6510179A-T1
Package
79A
Supplying Form
• 12 mm wide embossed taping
• Qty 1 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative
(Part number for sample order: NE6510179A).
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13496EJ4V0DS00 (4th edition)
Date Published August 2000 N CP(K)
The mark shows major revised points.
©
Printed in Japan
1998, 2000
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