SIA411DJ-T1-E3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SIA411DJ-T1-E3 Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
VGS = 2 thru 5 V
16
8
SiA411DJ
Vishay Siliconix
12
1.5 V
8
4
0
0.0
0.12
1V
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.10
0.08
0.06
VGS = 1.8 V
0.04
VGS = 2.5 V
VGS = 4.5 V
0.02
0
4
8
12
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
ID = 8.8 A
6
VDS = 10 V
4
VDS = 16 V
2
6
4
TC = 125 °C
2
TC = 25 °C
TC = - 55 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2100
1800
1500
Ciss
1200
900
600
Coss
300
Crss
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
ID = 5.9 A
1.4
VGS = 4.5 V, 2.5 V, 1.8 V
1.2
1.0
0.8
0
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74464
S-80435-Rev. C, 03-Mar-08
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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