DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

74LVC1G04-Q100(2013) Просмотр технического описания (PDF) - NXP Semiconductors.

Номер в каталоге
Компоненты Описание
производитель
74LVC1G04-Q100
(Rev.:2013)
NXP
NXP Semiconductors. NXP
74LVC1G04-Q100 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
74LVC1G04-Q100
Single inverter
Rev. 1 — 29 January 2013
Product data sheet
1. General description
The 74LVC1G04-Q100 provides one inverting buffer.
Input can be driven from either 3.3 V or 5 V devices. These features allow the use of
these devices in a mixed 3.3 V and 5 V environment.
Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall
time.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from 40 C to +85 C and from 40 C to +125 C
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant inputs for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V)
24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]