74AHCT1G126SE-7 Просмотр технического описания (PDF) - Diodes Incorporated.
Номер в каталоге
Компоненты Описание
производитель
74AHCT1G126SE-7 Datasheet PDF : 9 Pages
| |||
74AHCT1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Electrical Characteristics
Symbol Parameter Test Conditions
VOH
High Level
IOH = -50μA
Output Voltage IOH = -8mA
VCC
4.5V
4.5V
25ºC
-40ºC to 85ºC -40ºC to 125ºC
Unit
Min Typ. Max Min Max Min Max
4.4 4.5
4.4
4.4
V
3.94
3.8
3.70
VOL
Low Level
IOL = 50μA
Output Voltage IOL = 8mA
4.5V
4.5V
0 0.1
0.1
0.36
0.44
0.1
V
0.55
II Input Current VI = 5.5V or GND 0 to 5.5V
± 0.1
±1
±2
μA
Z State
IOZ Leakage
Current
VO =0 to 5.5V
5.5V
0.25
2.5
10
μA
ICC
Supply Current VI = 5.5V or GND
IO=0
5.5V
1
10
Ci
Input
Capacitance
VI = VCC – or
GND
5.5V
2.0 10
10
ΔICC
One input at 3.4
Additional
Supply Current
V Other inputs at
VCC or GND
5.5V
1.35
1.5
Thermal
θJA
Resistance
Junction-to-
Ambient
SOT25
SOT353
204
(Note 4)
371
Thermal
Resistance
θJC Junction-to-
Case
SOT25
SOT353
52
(Note 4)
143
40
μA
10
pF
mA
oC/W
oC/W
Note: 4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
74AHCT1G126
Document number: DS35187Rev. 1 - 2
4 of 9
www.diodes.com
May 2011
© Diodes Incorporated
Share Link: 