ESD7481 Просмотр технического описания (PDF) - ON Semiconductor

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производитель

ESD7481

ESD Protection Diodes

ON Semiconductor 

ESD7481, SZESD7481

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

IT

Test Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

I

IPP

IT

VC VBR VRWM IR IIRT VRWM VBR VC V

IPP

Bi−Directional TVS

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max Unit

Reverse Working Voltage

Breakdown Voltage (Note 2)

Reverse Leakage Current

Clamping Voltage (Note 3)

Clamping Voltage (Note 3)

ESD Clamping Voltage

Junction Capacitance

Dynamic Resistance

Insertion Loss

VRWM

VBR

IR

VC

VC

VC

CJ

RDYN

IT = 1 mA

VRWM = 3.3 V

IPP = 1 A

IPP = 3 A

Per IEC61000−4−2

VR = 0 V, f = 1 Mhz

VR = 0 V, f < 1 GHz

TLP Pulse

f = 1 Mhz

f = 8.5 GHz

3.3

V

6.0

V

< 1.0

50

nA

10

V

12

V

See Figures 1 and 2

0.25

0.40

pF

0.15

0.30

0.60

W

0.030

dB

0.234

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.

3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

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