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1N5712 Просмотр технического описания (PDF) - Avago Technologies

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Компоненты Описание
производитель
1N5712 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Typical Parameters, continued
100
10
1.0
+150 C
+100 C
0.1
+50 C
+25 C
0C
0.01
–50 C
0 0.2 0.4 0.6 0.8 1.0 1.2
VF - FORWARD VOLTAGE (V)
Figure 6. I-V Curve Showing Typical Temperature
Variation for the 5082-2811 Schottky Diode.
100,000
100
10,000
1000
100
10
150
100
50
25
TA = C
1
0 5 10 15 20 25 30
VR - REVERSE VOLTAGE (V)
Figure 7. (5082-2811) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
10
1.0
+150 C
+100 C
+50 C
0.1
+25 C
0C
–50 C
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2
VF - FORWARD VOLTAGE (V)
Figure 8. I-V Curve Showing Typical Temperature
Variations for 5082-2835 Schottky Diode.
100,000
10,000
1000
100
10
+150 C
+125 C
+100 C
+75 C
+50 C
+25 C
1
01
2
3
4
5
6
VR - REVERSE VOLTAGE (V)
Figure 9. (5082-2835) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
11.4
1.2
1.0
0.8
5082-2810/2811
0.6
1N5712
5082-2835
0.4
0.2
0
0
2
4
6
8
10
VR - REVERSE VOLTAGE (V)
Figure 10. Typical Capacitance (CT) vs. Reverse
Voltage (VR).
1000
5082-2800, 1N5711
100
5082-2811
5082-2811
1N5712
10
5082-2835
1
0
2
4
6
8
10
IF - FORWARD CURRENT (mA)
Figure 11. Typical Dynamic Resistance (RD) vs.
Forward Current (IF).
Notes:
Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution


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