Introduction
1.2
1.2.1
Interfaces
System Memory Support
Support DDr2 SDRAMs (N450 and N470 support DDR2 only)
• One channel of DDR2 memory (consists of 64-bit of data lines):
— Maximum of two SO-DIMMs in Raw Card-A or Raw Card-C format
• Memory DDR2 data transfer rates of 667 MT/s
• I/O Voltage of 1.8 V for DDR2
• Non-ECC, unbuffered DDR2 SO-DIMMs only
• 512-Mb, 1-Gb and 2-Gb DDR2 DRAM technologies supported
• Maximum of 2-GB memory capacity supported
— Maximum 1-GB memory capacity on one SO-DIMM or Memory Down
• Memory organizations:
— Two SO-DIMMs
— One SO-DIMM only
— One SO-DIMM and One Memory Down (based on simulations only)
• Up to 32 simultaneous open pages (assuming 4 Ranks of 8 Bank Devices)
• Partial Writes to memory using Data Mask signals (DM)
• On-Die Termination (ODT)
• Intel® Fast Memory Access (Intel FMA)
— Just-in-Time Command Scheduling
— Command Overlap
— Out-of-Order Scheduling
— Opportunistic Writes
• Support memory thermal management scheme to selectively manage reads and/or
writes. Memory thermal management can be triggered by either on-die thermal
sensor, or by preset limits. Management limits are determined by weighted sum of
various commands that are scheduled on the memory interface.
•
Support DDR3 SDRAMs:
• Support for DDR3 at data transfer rate of 667 MT/s
• One channel of DDR3 memory (consists of 64-bit of data lines): Maximum of two
SO-DIMMs in Raw Card-A or Raw Card-B format
• I/O Voltage of 1.5 V for DDR3
Datasheet
9