C2M0040120D Просмотр технического описания (PDF) - Cree, Inc

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Компоненты Описание

производитель

C2M0040120D

Silicon Carbide Power MOSFET C2M™ MOSFET Technology

Cree, Inc 

Test Circuit Schematic

VDC CDC=42.3 uF

L=80 uH

C4D20120A

D1

20A, 1200V

SiC Schottky

Q1

D.U.T

C2M0040120D

Figure 30. Clamped Inductive Switching

Waveform Test Circuit

VDC

CDC=42.3

uF

L=80

uH

Q1

VGS= - 5V

D.U.T

C2M0040120D

Q2

C2M0040120D

Figure 31. Body Diode Recovery Test Circuit

ESD Ratings

ESD Test

ESD-HBM

ESD-MM

ESD-CDM

Total Devices Sampled

All Devices Passed 1000V

All Devices Passed 400V

All Devices Passed 1000V

8

C2M0040120D Rev. B, 10-2015

Resulting Classification

2 (>2000V)

C (>400V)

IV (>1000V)

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