C2M0040120D Просмотр технического описания (PDF) - Cree, Inc
Номер в каталоге
Компоненты Описание
производитель
C2M0040120D Datasheet PDF : 10 Pages
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Typical Performance
3.5
Conditions:
TJ = 25 °C
3.0 VDD = 800 V
IDS = 40 A
VGS = -5/+20 V
2.5 FWD = C4D20120A
L = 80 μH
2.0
1.5
1.0
ETotal
EOn
EOff
0.5
0.0
0
5
10
15
20
25
30
External Gate Resistor RG(ext) (Ohms)
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
100
Conditions:
90
TJ = 25 °C
VDD = 800 V
80
RL = 20 Ω
VGS = -5/+20 V
70
60
50
40
tr
tf
td (off)
30
td (on)
20
10
0
0
4
8
12
16
20
External Gate Resistor, RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
70
60
50
40
30
20
10
0
0
Conditons:
VDD = 50 V
25
50
75
100
125
150
175
200
Time in Avalanche TAV (us)
Figure 29. Single Avalanche SOA curve
2.5
Conditions:
IDS = 40 A
VDD = 800 V
2.0
RG(ext) = 2.5 Ω
VGS = -5/+20 V
FWD = C4D20120A
1.5
ETotal
L = 80 µH
1.0
EOn
EOff
0.5
0.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 28. Switching Times Definition
7
C2M0040120D Rev. B, 10-2015
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