C2M0040120D Просмотр технического описания (PDF) - Cree, Inc
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Компоненты Описание
производитель
C2M0040120D Datasheet PDF : 10 Pages
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Typical Performance
60
Conditions:
VDS = 20 V
50 tp < 200 µs
40
30
TJ = 150 °C
TJ = 25 °C
20
TJ = -55 °C
10
0
0
-6
2
4
6
8
10
12
14
Gate-Source Voltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-5
-4
VGS = -5 V
-3
-2
VGS = 0 V
-1
0
0
Condition:
TJ = 25 °C
tp < 200 µs
-20
VGS = -2 V
-40
-6
-5
-4
-3
-2
-1
0
0
Condition:
VGS = -5 V
VGS = 0 V
TJ = -55 °C
tp < 200 µs
-20
VGS = -2 V
-40
-60
-80
-100
Drain-Source Voltage, VDS (A)
Figure 8. Body Diode Characteristic at -55 ºC
-6
-5
-4
-3
-2
-1
0
0
VGS = -5 V
VGS = 0 V
Condition:
TJ = 150 °C
tp < 200 µs
-20
VGS = -2 V
-40
-60
-60
-80
-80
-100
Drain-Source Voltage, VDS (A)
Figure 9. Body Diode Characteristic at 25 ºC
3.5
Conditions
VDS = 1V0GSV
3.0
IDS = 01.05mmAA
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature TJ (°C)
Figure 11. Threshold Voltage vs. Temperature
-100
Drain-Source Voltage, VDS (A)
Figure 10. Body Diode Characteristic at 150 ºC
25
Conditions:
IDS = 40 A
20
IGS = 100 mA
VDS = 800 V
TJ = 25 °C
15
10
5
0
-5
0
20
40
60
80
100
120
140
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
4
C2M0040120D Rev. B, 10-2015
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