Typical Performance
100
Conditions:
TJ = -55 °C
tp < 200 µs
VGS = 20 V
80
VGS = 18 V
VGS = 16 V
60
VGS = 14 V
40
VGS = 12 V
20
VGS = 10 V
0
0.0
2.5
5.0
7.5
10.0
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 °C
100
Conditions:
TJ = 150 °C
tp < 200 µs
80
60
40
VGS = 20 V
VGS = 16 V
VGS = 18 V
VGS = 14 V
VGS = 12 V
VGS = 10 V
20
0
0.0
2.5
5.0
7.5
10.0
Drain-Source Voltage, VDS (V)
Figure 3. Output Characteristics TJ = 150 °C
140
Conditions:
VGS = 20 V
120 tp < 200 µs
100
TJ = 150 °C
80
60
TJ = 25 °C
TJ = -55 °C
40
20
0
0
20
40
60
80
100
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
C2M0040120D Rev. B, 10-2015
100
Conditions:
TJ = 25 °C
tp < 200 µs
80
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
60
VGS = 12 V
40
VGS = 10 V
20
0
0.0
2.5
5.0
7.5
10.0
Drain-Source Voltage, VDS (V)
Figure 2. Output Characteristics TJ = 25 °C
2.0
Conditions:
1.8
IDS = 40 A
VGS = 20 V
1.6
tp < 200 µs
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Figure 4. Normalized On-Resistance vs. Temperature
140
Conditions:
IDS = 40 A
120 tp < 200 µs
100
80
VGS = 14 V
VGS = 16 V
60
VGS = 18 V
40
VGS = 20 V
20
0
-50
-25
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage