C2M0040120D Просмотр технического описания (PDF) - Cree, Inc
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C2M0040120D Datasheet PDF : 10 Pages
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VDS
1200 V
C2M0040120D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C
RDS(on)
60 A
40 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
TO-247-3
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Battery Chargers
• Motor Drives
• Pulsed Power Applications
Part Number
C2M0040120D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID
Continuous Drain Current
ID(pulse) Pulsed Drain Current
1200
-10/+25
-5/+20
60
40
160
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
VGS = 20 V, TC = 25˚C
A
VGS = 20 V, TC = 100˚C
A Pulse width tP limited by Tjmax
PD
Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL
Solder Temperature
Md
Mounting Torque
330
-55 to
+150
260
1
8.8
W TC=25˚C, TJ = 150 ˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
Note
Fig. 19
Fig. 22
Fig. 20
1
C2M0040120D Rev. B, 10-2015
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